製造零件編號

onsemi SUPERFET V Type N-Channel MOSFET, 57 A, 600 V Enhancement, 3-Pin TO-247

RS庫存編號:: 230-9086
製造零件編號:: NTHL041N60S5H
製造商:: onsemi

onsemi SUPERFET V Type N-Channel MOSFET, 57 A, 600 V Enhancement, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 450 件）*

TWD90,540.00

(不含稅)

TWD95,067.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月05日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
450 - 450	TWD201.20	TWD90,540.00
900 +	TWD197.20	TWD88,740.00

* 參考價格

RS庫存編號:: 230-9086
製造零件編號:: NTHL041N60S5H
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	57A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	SUPERFET V
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	329W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	108nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Height	41.07mm
	Width	4.82 mm
	Standards/Approvals	Pb-Free, RoHS
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 57A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series SUPERFET V
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 329W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 108nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Height 41.07mm
	Width 4.82 mm
	Standards/Approvals Pb-Free, RoHS
	Automotive Standard No

Datasheet - NTHL041N60S5H

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.

100% Avalanche Tested

RoHS Compliant

Typ. RDS(on) = 32.8 mΩ

Internal Gate Resistance: 0.6 Ω

Ultra Low Gate Charge (Typ. Qg = 108 nC)

onsemi SUPERFET V Type N-Channel MOSFET, 57 A, 600 V Enhancement, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

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