onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 230-9088
- 製造零件編號:
- NTHL099N60S5
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 450 件)*
TWD53,820.00
(不含稅)
TWD56,511.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月26日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 450 - 450 | TWD119.60 | TWD53,820.00 |
| 900 + | TWD117.20 | TWD52,740.00 |
* 參考價格
- RS庫存編號:
- 230-9088
- 製造零件編號:
- NTHL099N60S5
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SUPERFET V | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 184W | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Height | 41.07mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SUPERFET V | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 184W | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Height 41.07mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.
Ultra Low Gate Charge (Typ. Qg= 48 nC)
Low switching loss
Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)
Low switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
650 V @ TJ = 150°C
Typ. RDS(on) = 79.2 m Ω
100% Avalanche Tested
RoHS Compliant
Internal Gate Resistance: 6.9 Ω
相關連結
- onsemi SUPERFET V Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 NTHL099N60S5
- onsemi SUPERFET V Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- onsemi SUPERFET V Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 NTHL041N60S5H
- onsemi SuperFET II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- onsemi SuperFET II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- onsemi SuperFET II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 FCH041N60F
- onsemi SuperFET II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 FCH041N60E
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
