onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247
- RS庫存編號:
- 230-9084
- 製造零件編號:
- NTH4LN040N65S3H
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 450 件）*
TWD129,240.00
(不含稅)
TWD135,702.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 450 - 450 | TWD287.20 | TWD129,240.00 |
| 900 - 4050 | TWD281.40 | TWD126,630.00 |
| 4500 + | TWD275.80 | TWD124,110.00 |
* 參考價格
- RS庫存編號:
- 230-9084
- 製造零件編號:
- NTH4LN040N65S3H
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 379W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 132nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.4 mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Height | 13.28mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 379W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 132nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.4 mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Height 13.28mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.
100% Avalanche Tested
RoHS Compliant
Typ. RDS(on) = 32 mΩ
Internal Gate Resistance: 0.7 Ω
Ultra Low Gate Charge (Typ. Qg = 132 nC)
700 V @ TJ = 150 oC
相關連結
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H
- onsemi SuperFET III MOSFET Easy-drive Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NVHL072N65S3
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin H-PSOF
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin H-PSOF NTBL082N65S3HF
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263
- onsemi SUPERFET III Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263 FCB125N65S3
- onsemi SUPERFET III Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220 FCP165N65S3