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選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	SUPERFET III
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	181W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Operating Temperature	150°C
	Width	9.6 mm
	Standards/Approvals	RoHS
	Length	14.6mm
	Height	4.6mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series SUPERFET III
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 181W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Operating Temperature 150°C
	Width 9.6 mm
	Standards/Approvals RoHS
	Length 14.6mm
	Height 4.6mm
	Automotive Standard No

Datasheet - FCB125N65S3

The ON Semiconductor SUPERFET III series N-Channel MOSFET is high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Continuous Drain Current rating is 24A

Drain to source on resistance rating is 125mohm

Ultra low gate charge

Low stored energy in output capacitance

100% avalanche tested

Package type is D2-PAK

onsemi SUPERFET III Type N-Channel MOSFET & Diode, 24 A, 650 V Enhancement, 3-Pin TO-263

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