onsemi SUPERFET III Type N-Channel MOSFET, 16 A, 650 V N, 8-Pin TDFN NTMT190N65S3H
- RS庫存編號:
- 229-6482
- 製造零件編號:
- NTMT190N65S3H
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD228.00
(不含稅)
TWD239.40
(含稅)
添加 12 件 件可免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD114.00 | TWD228.00 |
| 10 - 98 | TWD110.50 | TWD221.00 |
| 100 - 248 | TWD108.00 | TWD216.00 |
| 250 - 498 | TWD105.00 | TWD210.00 |
| 500 + | TWD103.00 | TWD206.00 |
* 參考價格
- RS庫存編號:
- 229-6482
- 製造零件編號:
- NTMT190N65S3H
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 129W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Width | 1.1 mm | |
| Height | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 129W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Width 1.1 mm | ||
Height 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SUPER FET series is brand new high voltage super junction MOSFET that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Low effective output capacitance
100% avalanche tested
Higher system reliability at low temperature operation
Pb−free
RoHS compliant
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