onsemi SuperFET III MOSFET Easy-drive Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-263 NVB072N65S3
- RS庫存編號:
- 186-1461
- 製造零件編號:
- NVB072N65S3
- 製造商:
- onsemi
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小計（1 包，共 2 件）*
TWD387.00
(不含稅)
TWD406.36
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 770 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 198 | TWD193.50 | TWD387.00 |
| 200 - 398 | TWD188.50 | TWD377.00 |
| 400 + | TWD185.50 | TWD371.00 |
* 參考價格
- RS庫存編號:
- 186-1461
- 製造零件編號:
- NVB072N65S3
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SuperFET III MOSFET Easy-drive | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 107mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Height | 4.58mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SuperFET III MOSFET Easy-drive | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 107mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Height 4.58mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
不相容
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
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