Vishay TrenchFET Type P-Channel MOSFET, 12.5 A, 20 V Enhancement, 8-Pin TSSOP Si6423ADQ-T1-GE3
- RS庫存編號:
- 228-2823
- 製造零件編號:
- Si6423ADQ-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD271.00
(不含稅)
TWD284.60
(含稅)
訂單超過 $1,300.00 免費送貨
正在逐步停售
- 最終 5,530 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD27.10 | TWD271.00 |
| 50 - 90 | TWD26.30 | TWD263.00 |
| 100 - 240 | TWD25.80 | TWD258.00 |
| 250 - 990 | TWD25.10 | TWD251.00 |
| 1000 + | TWD24.50 | TWD245.00 |
* 參考價格
- RS庫存編號:
- 228-2823
- 製造零件編號:
- Si6423ADQ-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSSOP | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSSOP | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET P-Channel power MOSFET is use for load switch, battery switch and power management.
100 % Rg and UIS tested
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