Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223
- RS庫存編號:
- 225-0556
- 製造零件編號:
- BSS123IXTSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 卷，共 3000 件）*
TWD3,000.00
(不含稅)
TWD3,150.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,000 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 6000 | TWD1.00 | TWD3,000.00 |
| 9000 - 12000 | TWD1.00 | TWD3,000.00 |
| 15000 + | TWD1.00 | TWD3,000.00 |
* 參考價格
- RS庫存編號:
- 225-0556
- 製造零件編號:
- BSS123IXTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS123I | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 0.63nC | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS123I | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 0.63nC | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
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