Infineon BSS123I N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1
- RS庫存編號:
- 225-0557
- Distrelec 貨號:
- 304-39-400
- 製造零件編號:
- BSS123IXTSA1
- 製造商:
- Infineon
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TWD340.00
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TWD357.00
(含稅)
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- 200 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 100 - 100 | TWD3.40 | TWD340.00 |
| 200 - 200 | TWD3.40 | TWD340.00 |
| 300 - 300 | TWD3.30 | TWD330.00 |
| 400 - 400 | TWD3.20 | TWD320.00 |
| 500 + | TWD3.20 | TWD320.00 |
* 參考價格
- RS庫存編號:
- 225-0557
- Distrelec 貨號:
- 304-39-400
- 製造零件編號:
- BSS123IXTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS123I | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 0.63nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS123I | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 0.63nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
Infineon BSS123I Series MOSFET, 100V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS123IXTSA1
This MOSFET is a small-signal N-channel transistor designed for surface-mount applications, providing switching and amplification functions across a wide temperature range. It is intended for circuits requiring a depletion-mode device with modest current handling and moderate voltage capability, suitable for Compact assemblies where a SOT-223 package and conservative power handling are required.
Features and Benefits:
• 100 V drain-to-source rating delivers high-voltage switching capability
• 10 Ω maximum RDS(on) provides controlled on-state conduction
• 190 mA continuous drain current supports low-current loads
• 0.5 W power dissipation limits thermal stress in constrained layouts
• 0.63 nC typical gate charge enables modest switching energy demands
• ±20 V gate tolerance allows broad gate-drive flexibility
• 10 Ω maximum RDS(on) provides controlled on-state conduction
• 190 mA continuous drain current supports low-current loads
• 0.5 W power dissipation limits thermal stress in constrained layouts
• 0.63 nC typical gate charge enables modest switching energy demands
• ±20 V gate tolerance allows broad gate-drive flexibility
Applications
• Used for low-current high-voltage switching in control circuits
• Suitable for surface-mount power management on Compact boards
• Ideal for analogue signal attenuation or pull-down functions
• Can be used for level-shifting in mixed-voltage systems
• Used with driver stages needing depletion-mode characteristics
• Suitable for surface-mount power management on Compact boards
• Ideal for analogue signal attenuation or pull-down functions
• Can be used for level-shifting in mixed-voltage systems
• Used with driver stages needing depletion-mode characteristics
What ambient temperature range can it operate in?
It is specified to function correctly from -55°C up to 150°C.
What package should designers plan for when laying out the board?
The device comes in a SOT-223 surface-mount package with four pins for PCB footprint planning.
How does its gate charge affect switching performance?
A typical gate charge of 0.63 nC reduces required gate-drive energy and influences transition speed in switching topologies.
What limits the maximum continuous current in applications?
The specified continuous drain current of 190 mA defines thermal and conduction limits for sustained operation.
Is this intended as an automotive-grade component?
It is not classified to automotive standards and should not be assumed to meet automotive qualification.
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