Infineon BSP135I Type N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- RS庫存編號:
- 225-0555
- 製造零件編號:
- BSP135IXTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD201.00
(不含稅)
TWD211.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 150 件從 2026年8月31日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD20.10 | TWD201.00 |
| 20 - 90 | TWD19.50 | TWD195.00 |
| 100 - 240 | TWD19.10 | TWD191.00 |
| 250 - 490 | TWD18.60 | TWD186.00 |
| 500 + | TWD17.10 | TWD171.00 |
* 參考價格
- RS庫存編號:
- 225-0555
- 製造零件編號:
- BSP135IXTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | BSP135I | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 60Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series BSP135I | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 60Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon BSP135I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
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