Infineon IPP60R N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220 IPP60R120P7XKSA1
- RS庫存編號:
- 222-4928
- 製造零件編號:
- IPP60R120P7XKSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 管，共 50 件）*
TWD4,480.00
(不含稅)
TWD4,704.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 400 件從 2026年10月19日 起發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 100 | TWD89.60 | TWD4,480.00 |
| 150 - 200 | TWD86.10 | TWD4,305.00 |
| 250 + | TWD80.80 | TWD4,040.00 |
* 參考價格
- RS庫存編號:
- 222-4928
- 製造零件編號:
- IPP60R120P7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP60R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 95W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.36mm | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP60R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 95W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.36mm | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Automotive Standard No | ||
Infineon IPP60R Series MOSFET, 600V Maximum Drain Source Voltage, 26A Maximum Continuous Drain Current - IPP60R120P7XKSA1
This MOSFET is a high-voltage switching transistor designed for power-control applications where elevated voltage tolerance and thermal range are required. It operates as an N-channel enhancement device in a through-hole TO-220 package and is suitable for circuit designs that demand robust gate drive and significant continuous current handling in demanding temperature environments.
Features and Benefits:
• 600 V drain-source voltage enables high-voltage switching capability
• 120 mΩ RDS(on) reduces conduction losses for improved efficiency
• 26 A continuous drain current supports substantial load currents
• 36 nC typical gate charge eases gate-drive sizing for Faster switching
• 95 W maximum power dissipation allows high-power operation
• −55 °C to 150 °C operating range supports wide thermal environments
• 120 mΩ RDS(on) reduces conduction losses for improved efficiency
• 26 A continuous drain current supports substantial load currents
• 36 nC typical gate charge eases gate-drive sizing for Faster switching
• 95 W maximum power dissipation allows high-power operation
• −55 °C to 150 °C operating range supports wide thermal environments
Applications
• Suitable for high-voltage SMPS primary switching stages
• Ideal for motor-drive half-bridge circuits requiring through-hole mounting
• Used with industrial inverters handling elevated voltages
• Can be used for switch-mode power conversion in bench equipment
• Appropriate for power supplies where robust thermal tolerance is necessary
• Ideal for motor-drive half-bridge circuits requiring through-hole mounting
• Used with industrial inverters handling elevated voltages
• Can be used for switch-mode power conversion in bench equipment
• Appropriate for power supplies where robust thermal tolerance is necessary
What is the maximum gate voltage recommended for drive circuitry?
The device accepts gate-source voltages up to 20 V, so gate drivers should be selected to remain within this limit.
How does package choice affect mounting and thermal management?
The TO-220 through-hole package facilitates heatsinking and straightforward PCB mounting for improved thermal dissipation.
What conduction performance can be expected during heavy loads?
With an RDS(on) up to 120 mΩ and continuous drain current of 26 A, conduction losses are quantifiable for thermal-design calculations.
How should switching losses be accounted for in design?
Use the typical gate charge of 36 nC to estimate driver energy per switching event and include the 600 V rating when calculating voltage-related switching losses.
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