Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220 SPA20N60C3XKSA1

RS庫存編號:: 170-2267
製造零件編號:: SPA20N60C3XKSA1
製造商:: Infineon

Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220 SPA20N60C3XKSA1

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可享批量折扣

小計（1 管，共 50 件）*

TWD3,725.00

(不含稅)

TWD3,911.00

訂單超過 $1,300.00 免費送貨

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單位	每單位	每管*
50 - 50	TWD74.50	TWD3,725.00
100 - 150	TWD72.90	TWD3,645.00
200 +	TWD71.40	TWD3,570.00

* 參考價格

RS庫存編號:: 170-2267
製造零件編號:: SPA20N60C3XKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20.7A
	Maximum Drain Source Voltage Vds	600V
	Series	SPA20N60C3
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	34.5W
	Typical Gate Charge Qg @ Vgs	87nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	16.15mm
	Standards/Approvals	No
	Length	10.65mm
	Width	4.85 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20.7A
	Maximum Drain Source Voltage Vds 600V
	Series SPA20N60C3
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 34.5W
	Typical Gate Charge Qg @ Vgs 87nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 16.15mm
	Standards/Approvals No
	Length 10.65mm
	Width 4.85 mm
	Automotive Standard No

豁免

Infineon MOSFET

The Infineon TO-220FP-3 through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 34.5W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of use

• Field proven CoolMOM quality

• High efficiency and power density

• High peak current capability

• High reliability

• Improved transconductance

• Lead (Pb) free

• Low gate charge (Qg)

• Low specific on state resistance

• Operating temperature ranges between -55°C and 150°C

• Outstanding cost/performance

• Periodic avalanche rated

• Ultra low gate charge

• Very low energy storage in output capacitance (Eoss) 400V

Applications

• Adapter

• PC power

• Server power supplies

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC