Infineon CoolMOS™ C3 N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 SPW20N60C3FKSA1

RS庫存編號:: 462-3449
製造零件編號:: SPW20N60C3FKSA1
製造商:: Infineon

Infineon CoolMOS™ C3 N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 SPW20N60C3FKSA1

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RS庫存編號:: 462-3449
製造零件編號:: SPW20N60C3FKSA1
製造商:: Infineon

Infineon CoolMOS™C3 Power MOSFET

Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1

This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.

Features & Benefits

• N-channel configuration enhances conduction capabilities
• Maximum continuous drain current of 21A supports intensive applications
• High voltage rating of 650V provides reliability in challenging conditions
• Low gate charge facilitates efficient switching, reducing energy losses
• Excellent thermal performance allows operation at elevated temperatures
• Designed for through-hole mounting, simplifying assembly procedures

Applications

• Power supply regulation and management in industrial systems
• Motor control systems for efficient power delivery
• Utilised in DC-DC converters for high voltage
• Integrated into renewable energy systems for effective energy conversion
• Employed in power electronics for improved device performance

What is the maximum operating temperature for this component?

It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.

How does the low gate charge benefit device operation?

A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.

Can this MOSFET handle repeated high-temperature cycling?

Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.

Is there a specific mounting style recommended for this device?

This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

屬性	值
Channel Type	N
Maximum Continuous Drain Current	21 A
Maximum Drain Source Voltage	650 V
Series	CoolMOS™ C3
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	208 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	15.9mm
Typical Gate Charge @ Vgs	87 nC @ 10 V
Transistor Material	Si
Width	5.3mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	20.95mm