Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220
- RS庫存編號:
- 171-1920
- Distrelec 貨號:
- 304-30-528
- 製造零件編號:
- SPA20N60C3XKSA1
- 製造商:
- Infineon
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可享批量折扣
小計(1 包,共 2 件)*
TWD260.00
(不含稅)
TWD273.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 28 件準備從其他地點送貨
- 加上 116 件從 2026年1月27日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD130.00 | TWD260.00 |
| 14 + | TWD121.00 | TWD242.00 |
* 參考價格
- RS庫存編號:
- 171-1920
- Distrelec 貨號:
- 304-30-528
- 製造零件編號:
- SPA20N60C3XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SPA20N60C3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 34.5W | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.65mm | |
| Height | 16.15mm | |
| Width | 4.85 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SPA20N60C3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 34.5W | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.65mm | ||
Height 16.15mm | ||
Width 4.85 mm | ||
Automotive Standard No | ||
豁免
Infineon MOSFET
The Infineon TO-220FP-3 through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 34.5W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Ease of use
• Field proven CoolMOM quality
• High efficiency and power density
• High peak current capability
• High reliability
• Improved transconductance
• Lead (Pb) free
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost/performance
• Periodic avalanche rated
• Ultra low gate charge
• Very low energy storage in output capacitance (Eoss) 400V
Applications
• Adapter
• PC power
• Server power supplies
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC
相關連結
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