製造零件編號

Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220

RS庫存編號:: 222-4923
製造零件編號:: IPP60R022S7XKSA1
製造商:: Infineon

Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD10,330.00

(不含稅)

TWD10,846.50

訂單超過 $1,300.00 免費送貨

有庫存

350 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
50 - 100	TWD206.60	TWD10,330.00
150 - 200	TWD202.40	TWD10,120.00
250 +	TWD196.40	TWD9,820.00

* 參考價格

RS庫存編號:: 222-4923
製造零件編號:: IPP60R022S7XKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	IPP60R
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	390W
	Typical Gate Charge Qg @ Vgs	150nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	10.36mm
	Width	4.57 mm
	Standards/Approvals	No
	Height	9.45mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series IPP60R
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 390W
	Typical Gate Charge Qg @ Vgs 150nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 10.36mm
	Width 4.57 mm
	Standards/Approvals No
	Height 9.45mm
	Automotive Standard AEC-Q101

Datasheet - IPP60R022S7XKSA1

The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.

Minimize conduction losses

Increase energy efficiency

More compact and easier designs

Eliminate or reduce heat sink in solid state design

Lower total cost of ownership (TCO) or bill-of-material (BOM) cost

Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220

訂單超過 $1,300.00 免費送貨

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