Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220 IPP60R022S7XKSA1
- RS庫存編號:
- 222-4924
- 製造零件編號:
- IPP60R022S7XKSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 件）*
TWD288.00
(不含稅)
TWD302.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 398 件從 2026年2月23日 起裝運發貨
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|---|---|
| 1 - 9 | TWD288.00 |
| 10 - 99 | TWD281.00 |
| 100 - 249 | TWD274.00 |
| 250 - 499 | TWD268.00 |
| 500 + | TWD259.00 |
* 參考價格
- RS庫存編號:
- 222-4924
- 製造零件編號:
- IPP60R022S7XKSA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP60R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 390W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP60R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 390W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.
Minimize conduction losses
Increase energy efficiency
More compact and easier designs
Eliminate or reduce heat sink in solid state design
Lower total cost of ownership (TCO) or bill-of-material (BOM) cost
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