Infineon CoolMOSTM P7 MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO-220
- RS庫存編號:
- 273-7459
- 製造零件編號:
- IPAN60R180P7SXKSA1
- 製造商:
- Infineon
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小計(1 包,共 2 件)*
TWD102.00
(不含稅)
TWD107.10
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 440 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD51.00 | TWD102.00 |
| 10 - 18 | TWD42.00 | TWD84.00 |
| 20 - 98 | TWD41.00 | TWD82.00 |
| 100 - 248 | TWD34.00 | TWD68.00 |
| 250 + | TWD33.00 | TWD66.00 |
* 參考價格
- RS庫存編號:
- 273-7459
- 製造零件編號:
- IPAN60R180P7SXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO-220 | |
| Series | CoolMOSTM P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 26W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO-220 | ||
Series CoolMOSTM P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 26W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET of Cool MOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V Cool MOS P7 series is the successor to the Cool MOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, example very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses makes witching applications even more efficient, more compact and much cooler.
Ease of use
Excellent ESD robustness
Simplified thermal management
Significant reduction of switching
Suitable for hard and soft switching
相關連結
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