onsemi NTH4LN067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN067N65S3H
- RS庫存編號:
- 221-6710
- 製造零件編號:
- NTH4LN067N65S3H
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD489.00
(不含稅)
TWD513.44
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 406 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD244.50 | TWD489.00 |
| 10 - 98 | TWD238.50 | TWD477.00 |
| 100 - 248 | TWD233.00 | TWD466.00 |
| 250 - 498 | TWD226.50 | TWD453.00 |
| 500 + | TWD220.50 | TWD441.00 |
* 參考價格
- RS庫存編號:
- 221-6710
- 製造零件編號:
- NTH4LN067N65S3H
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTH4LN067N | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 266W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Standards/Approvals | RoHS | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTH4LN067N | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 266W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Standards/Approvals RoHS | ||
Height 22.74mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 691 pF
100% avalanche tested
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