onsemi NTHL Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 195-2500
- 製造零件編號:
- NTHL040N65S3HF
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD11,094.00
(不含稅)
TWD11,648.70
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 870 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD369.80 | TWD11,094.00 |
| 60 - 90 | TWD362.40 | TWD10,872.00 |
| 120 + | TWD355.20 | TWD10,656.00 |
* 參考價格
- RS庫存編號:
- 195-2500
- 製造零件編號:
- NTHL040N65S3HF
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | NTHL | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Maximum Power Dissipation Pd | 446W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series NTHL | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Maximum Power Dissipation Pd 446W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Height 20.82mm | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
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- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247