onsemi NTHL Type N-Channel MOSFET, 70 A, 650 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 189-0253
- 製造零件編號:
- NTHL033N65S3HF
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD8,391.00
(不含稅)
TWD8,810.40
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
由于供应链限制，库存會在有货的狀況下進行分配的。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD279.70 | TWD8,391.00 |
| 60 - 90 | TWD271.30 | TWD8,139.00 |
| 120 + | TWD263.20 | TWD7,896.00 |
* 參考價格
- RS庫存編號:
- 189-0253
- 製造零件編號:
- NTHL033N65S3HF
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | NTHL | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 188nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series NTHL | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 188nC | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 188 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 28 mΩ
Benefits
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Lower switching loss
Higher system reliability at low temperature operation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
相關連結
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL033N65S3HF
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247