onsemi Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 NVHL040N65S3F
- RS庫存編號:
- 186-1516
- 製造零件編號:
- NVHL040N65S3F
- 製造商:
- onsemi
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- RS庫存編號:
- 186-1516
- 製造零件編號:
- NVHL040N65S3F
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 153nC | |
| Maximum Power Dissipation Pd | 446W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 153nC | ||
Maximum Power Dissipation Pd 446W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
不相容
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 158 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)
PPAP Capable
Typ. RDS(on) = 32 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
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