onsemi NTBGS3D Type N-Channel MOSFET, 127 A, 60 V Enhancement, 7-Pin TO-263
- RS庫存編號:
- 221-6703
- 製造零件編號:
- NTBGS3D5N06C
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 800 件）*
TWD57,280.00
(不含稅)
TWD60,144.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 3200 | TWD71.60 | TWD57,280.00 |
| 4000 + | TWD70.20 | TWD56,160.00 |
* 參考價格
- RS庫存編號:
- 221-6703
- 製造零件編號:
- NTBGS3D5N06C
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 127A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTBGS3D | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 115W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Standards/Approvals | RoHS | |
| Width | 4.7 mm | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 127A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTBGS3D | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 115W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Standards/Approvals RoHS | ||
Width 4.7 mm | ||
Height 15.7mm | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 127A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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