onsemi NTBGS2D Type N-Channel MOSFET, 169 A, 60 V Enhancement, 7-Pin TO-263-7 NTBGS2D5N06C
- RS庫存編號:
- 221-6702
- 製造零件編號:
- NTBGS2D5N06C
- 製造商:
- onsemi
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小計（1 包，共 5 件）*
TWD648.00
(不含稅)
TWD680.40
(含稅)
訂單超過 $1,300.00 免費送貨
正在逐步停售
- 最終 755 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD129.60 | TWD648.00 |
| 10 - 95 | TWD126.60 | TWD633.00 |
| 100 - 245 | TWD123.00 | TWD615.00 |
| 250 - 495 | TWD120.00 | TWD600.00 |
| 500 + | TWD117.00 | TWD585.00 |
* 參考價格
- RS庫存編號:
- 221-6702
- 製造零件編號:
- NTBGS2D5N06C
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263-7 | |
| Series | NTBGS2D | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 45.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263-7 | ||
Series NTBGS2D | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 45.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Height 15.7mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 169 A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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