onsemi NTBGS1D Type N-Channel MOSFET, 267 A, 60 V Enhancement, 7-Pin TO-263 NTBGS1D5N06C
- RS庫存編號:
- 221-6700
- 製造零件編號:
- NTBGS1D5N06C
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD837.00
(不含稅)
TWD878.85
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 800 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD167.40 | TWD837.00 |
| 10 - 95 | TWD163.00 | TWD815.00 |
| 100 - 245 | TWD159.20 | TWD796.00 |
| 250 - 495 | TWD155.00 | TWD775.00 |
| 500 + | TWD151.20 | TWD756.00 |
* 參考價格
- RS庫存編號:
- 221-6700
- 製造零件編號:
- NTBGS1D5N06C
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | NTBGS1D | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.55mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 211W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series NTBGS1D | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.55mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 211W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Height 15.7mm | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 267A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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