製造零件編號

onsemi NTBGS1D Type N-Channel MOSFET, 267 A, 60 V Enhancement, 7-Pin TO-263 NTBGS1D5N06C

RS庫存編號:: 221-6700
製造零件編號:: NTBGS1D5N06C
製造商:: onsemi

onsemi NTBGS1D Type N-Channel MOSFET, 267 A, 60 V Enhancement, 7-Pin TO-263 NTBGS1D5N06C

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RS庫存編號:: 221-6700
製造零件編號:: NTBGS1D5N06C
製造商:: onsemi

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產品詳細資訊

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選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	267A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	NTBGS1D
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.55mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	211W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	78.6nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	10.2mm
	Standards/Approvals	RoHS
	Width	4.7 mm
	Height	15.7mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 267A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series NTBGS1D
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.55mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 211W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 78.6nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 10.2mm
	Standards/Approvals RoHS
	Width 4.7 mm
	Height 15.7mm
	Automotive Standard No

Datasheet - NTBGS1D5N06C

The ON Semiconductor 60V of power MOSFET used 267A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.

Low RDS(on) to minimize conduction losses

Low capacitance to minimize driver losses

onsemi NTBGS1D Type N-Channel MOSFET, 267 A, 60 V Enhancement, 7-Pin TO-263 NTBGS1D5N06C

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