Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON IPL60R095CFD7AUMA1

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包裝方式:
RS庫存編號:
220-7431
製造零件編號:
IPL60R095CFD7AUMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

97A

Maximum Drain Source Voltage Vds

650V

Package Type

VSON

Series

CoolMOS

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

147W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Width

8.1 mm

Length

8.1mm

Automotive Standard

No

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

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