製造零件編號

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON

RS庫存編號:: 220-7430
製造零件編號:: IPL60R095CFD7AUMA1
製造商:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD219,300.00

(不含稅)

TWD230,280.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

3,000 件從 2026年5月14日起裝運發貨
加上 3,000 件從 2026年5月21日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD73.10	TWD219,300.00
15000 +	TWD70.90	TWD212,700.00

* 參考價格

RS庫存編號:: 220-7430
製造零件編號:: IPL60R095CFD7AUMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS
	Package Type	VSON
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	147W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	8.1mm
	Width	8.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS
	Package Type VSON
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 147W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 8.1mm
	Width 8.1 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPL60R095CFD7AUMA1

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON

訂單超過 $1,300.00 免費送貨

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