Infineon CoolMOS P7 N-Channel MOSFET & Diode, 100 A, 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1
- RS庫存編號:
- 220-7432
- 製造零件編號:
- IPL60R105P7AUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD224,100.00
(不含稅)
TWD235,320.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年7月22日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD74.70 | TWD224,100.00 |
| 15000 + | TWD72.50 | TWD217,500.00 |
* 參考價格
- RS庫存編號:
- 220-7432
- 製造零件編號:
- IPL60R105P7AUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 137W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 137W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8.1mm | ||
Length 8.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET & Diode, 650V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - IPL60R105P7AUMA1
This MOSFET & diode is a high-voltage power switching device designed for surface-mount applications in power conversion and switching contexts. It combines an N-channel enhancement-mode transistor with an integrated diode to handle elevated drain-source voltages and substantial continuous currents while operating across a wide temperature range.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching applications
• 100A continuous drain current supports heavy load handling
• 105mΩ maximum Rds(on) reduces conduction losses in power stages
• 137W maximum power dissipation permits elevated thermal loading
• 45nC typical gate charge at Vgs 20V balances drive requirements
• VSON 5-pin package supports Compact surface-mount integration
• 100A continuous drain current supports heavy load handling
• 105mΩ maximum Rds(on) reduces conduction losses in power stages
• 137W maximum power dissipation permits elevated thermal loading
• 45nC typical gate charge at Vgs 20V balances drive requirements
• VSON 5-pin package supports Compact surface-mount integration
Applications
• Suitable for SMPS primary-side switching in high-voltage converters
• Ideal for offline power supplies requiring a high-voltage MOSFET diode
• Used for synchronous rectification in high-power converter designs
• Can be used for industrial motor-drive front-end stages
• Suitable for DC-DC converters handling substantial continuous current
• Ideal for offline power supplies requiring a high-voltage MOSFET diode
• Used for synchronous rectification in high-power converter designs
• Can be used for industrial motor-drive front-end stages
• Suitable for DC-DC converters handling substantial continuous current
What gate-drive voltage range is permitted for safe operation?
The device accepts gate-source voltages up to 20V while operating as an enhancement-mode N-channel device.
What thermal extremes can it withstand during operation?
It is specified for continuous operation from −40°C up to 150°C.
How does the package influence mounting and layout?
The VSON 5-pin surface-mount package enables low-profile mounting and straightforward PCB soldering for Compact assemblies.
What is the typical switching charge designers must budget for in gate drivers?
Expect a typical total gate charge around 45nC at the rated gate voltage, which informs driver current and switching-loss calculations.
相關連結
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R065P7AUMA1
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R095CFD7AUMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 4-Pin VSON
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 4-Pin VSON IPL60R185C7AUMA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin VSON