Infineon CoolMOS P6 Type N-Channel MOSFET, 22.4 A, 600 V Enhancement, 5-Pin VSON
- RS庫存編號:
- 214-9073
- 製造零件編號:
- IPL60R180P6AUMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 214-9073
- 製造零件編號:
- IPL60R180P6AUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | VSON | |
| Series | CoolMOS P6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 176W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Width | 8.1 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type VSON | ||
Series CoolMOS P6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 176W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Width 8.1 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Easy to use/drive
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