Infineon CoolMOS P6 Type N-Channel MOSFET, 19.2 A, 600 V Enhancement, 5-Pin VSON

RS庫存編號:: 214-9075
製造零件編號:: IPL60R210P6AUMA1
製造商:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET, 19.2 A, 600 V Enhancement, 5-Pin VSON

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD126,900.00

(不含稅)

TWD133,260.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月11日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD42.30	TWD126,900.00
15000 +	TWD41.10	TWD123,300.00

* 參考價格

RS庫存編號:: 214-9075
製造零件編號:: IPL60R210P6AUMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19.2A
	Maximum Drain Source Voltage Vds	600V
	Package Type	VSON
	Series	CoolMOS P6
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	210mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	151W
	Width	8.1 mm
	Standards/Approvals	No
	Height	1.1mm
	Length	8.1mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19.2A
	Maximum Drain Source Voltage Vds 600V
	Package Type VSON
	Series CoolMOS P6
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 210mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 151W
	Width 8.1 mm
	Standards/Approvals No
	Height 1.1mm
	Length 8.1mm
	Automotive Standard No

Datasheet - IPL60R210P6AUMA1

600V CoolMOSªP6 Power Transistor

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

Reduced gate charge (Q g)

Higher V th

Good body diode ruggedness

Optimized integrated R g

Improved dv/dt from 50V/ns

CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

Improved effciency especially in light load condition

Better efficiency in soft switching applications due to earlier turn-off

Suitable for hard- & soft-switching topologies

Optimized balance of efficiency and ease of use and good controllability of switching behavior

High robustness and better efficiency

Outstanding quality & reliability

Potential Applications

PFC stages for server, telecom rectifier, PC silverbox, gaming consoles

PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles