Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V, 7-Pin TO-263 IRLS4030TRL7PP
- RS庫存編號:
- 217-2642
- 製造零件編號:
- IRLS4030TRL7PP
- 製造商:
- Infineon
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TWD728.00
(不含稅)
TWD764.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 75 件從 2026年1月26日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD145.60 | TWD728.00 |
| 200 - 395 | TWD141.80 | TWD709.00 |
| 400 + | TWD139.40 | TWD697.00 |
* 參考價格
- RS庫存編號:
- 217-2642
- 製造零件編號:
- IRLS4030TRL7PP
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 370W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.55 mm | |
| Height | 15.3mm | |
| Length | 10.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 370W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.55 mm | ||
Height 15.3mm | ||
Length 10.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package.
Optimized for Logic Level Drive
Very Low RDS(ON) at 4.5V VGS
Superior R*Q at 4.5V VGS I
improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
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