製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 362 A, 40 V, 7-Pin TO-263

RS庫存編號:: 257-5558
製造零件編號:: IRFS7434TRL7PP
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 362 A, 40 V, 7-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 800 件）*

TWD36,000.00

(不含稅)

TWD37,800.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月04日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
800 +	TWD45.00	TWD36,000.00

* 參考價格

RS庫存編號:: 257-5558
製造零件編號:: IRFS7434TRL7PP
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	362A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	HEXFET
	Pin Count	7
	Maximum Drain Source Resistance Rds	0.7mΩ
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	210nC
	Maximum Power Dissipation Pd	245W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 362A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series HEXFET
	Pin Count 7
	Maximum Drain Source Resistance Rds 0.7mΩ
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 210nC
	Maximum Power Dissipation Pd 245W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFS7434TRL7PP

The Infineon MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt

Capability Lead-Free, RoHS Compliant

Infineon HEXFET Type N-Channel MOSFET, 362 A, 40 V, 7-Pin TO-263

訂單超過 $1,300.00 免費送貨

相關連結