Infineon HEXFET Type N-Channel MOSFET, 195 A, 60 V TO-263
- RS庫存編號:
- 257-9437
- 製造零件編號:
- IRFS7530TRLPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 800 件）*
TWD43,280.00
(不含稅)
TWD45,440.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 1600 | TWD54.10 | TWD43,280.00 |
| 2400 + | TWD53.00 | TWD42,400.00 |
* 參考價格
- RS庫存編號:
- 257-9437
- 製造零件編號:
- IRFS7530TRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
相關連結
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263 IRFS7530TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 IRFS4115TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263 IRFS3306TRLPBF