Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-263 IRFS7540TRLPBF
- RS庫存編號:
- 257-9440
- 製造零件編號:
- IRFS7540TRLPBF
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD341.00
(不含稅)
TWD358.05
(含稅)
添加 20 件 件可免費送貨
有庫存
- 加上 755 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | TWD68.20 | TWD341.00 |
| 25 - 45 | TWD66.60 | TWD333.00 |
| 50 - 95 | TWD65.60 | TWD328.00 |
| 100 - 245 | TWD62.20 | TWD311.00 |
| 250 + | TWD60.80 | TWD304.00 |
* 參考價格
- RS庫存編號:
- 257-9440
- 製造零件編號:
- IRFS7540TRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Maximum Power Dissipation Pd | 160W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Maximum Power Dissipation Pd 160W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a Lead Free D2 Pak package.
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
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