Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V, 7-Pin TO-263
- RS庫存編號:
- 217-2641
- 製造零件編號:
- IRLS4030TRL7PP
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 800 件）*
TWD61,680.00
(不含稅)
TWD64,768.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 800 | TWD77.10 | TWD61,680.00 |
| 1600 + | TWD74.80 | TWD59,840.00 |
* 參考價格
- RS庫存編號:
- 217-2641
- 製造零件編號:
- IRLS4030TRL7PP
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 370W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.35mm | |
| Standards/Approvals | No | |
| Width | 4.55 mm | |
| Height | 15.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 370W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.35mm | ||
Standards/Approvals No | ||
Width 4.55 mm | ||
Height 15.3mm | ||
Automotive Standard No | ||
The Infineon 100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package.
Optimized for Logic Level Drive
Very Low RDS(ON) at 4.5V VGS
Superior R*Q at 4.5V VGS I
improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
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