Infineon IPN N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K4P7SATMA1
- RS庫存編號:
- 217-2546
- 製造零件編號:
- IPN70R1K4P7SATMA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 50 件）*
TWD1,140.00
(不含稅)
TWD1,197.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 3,000 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | TWD22.80 | TWD1,140.00 |
| 750 - 1450 | TWD22.20 | TWD1,110.00 |
| 1500 + | TWD20.80 | TWD1,040.00 |
* 參考價格
- RS庫存編號:
- 217-2546
- 製造零件編號:
- IPN70R1K4P7SATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 6.2W | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 6.2W | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
Infineon IPN Series MOSFET, 700V Maximum Drain Source Voltage, 4A Maximum Continuous Drain Current - IPN70R1K4P7SATMA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mount applications in industrial thermal environments. It is intended to control power in circuits that require an enhancement‑mode transistor capable of handling elevated drain‑to‑source voltages and continuous current while operating across a wide temperature range.
Features and Benefits:
• 700V drain‑to‑source rating enables high-voltage switching
• 4A continuous drain current supports moderate load currents
• 1.4Ω Rds(on) reduces conduction losses under load
• 6.2W power dissipation allows sustained thermal load handling
• 30V gate tolerance provides robust gate-drive margin
• 4.7nC typical gate charge minimises switching energy
• 4A continuous drain current supports moderate load currents
• 1.4Ω Rds(on) reduces conduction losses under load
• 6.2W power dissipation allows sustained thermal load handling
• 30V gate tolerance provides robust gate-drive margin
• 4.7nC typical gate charge minimises switching energy
Applications
• Suitable for high-voltage switch circuits in power supplies
• Ideal for mid-power motor-drive stages with surface mounting
• Used for flyback and boost converter switching elements
• Can be used for controlled load switching in industrial equipment
• Suitable for circuits requiring wide temperature-range operation
• Ideal for mid-power motor-drive stages with surface mounting
• Used for flyback and boost converter switching elements
• Can be used for controlled load switching in industrial equipment
• Suitable for circuits requiring wide temperature-range operation
What temperature extremes can it withstand in operation?
It operates reliably from -40°C up to 150°C.
How many connection pins are available for layout considerations?
The device is supplied with three electrical terminals for PCB mounting.
What package type should be specified for surface assembly?
It uses a SOT-223 package suitable for surface‑mount soldering processes.
What is the typical forward drop if the integral diode conducts?
The device exhibits a forward voltage of 0.9V when the intrinsic diode is conducting.
How does the gate charge affect switching performance?
A typical gate charge of 4.7nC limits gate-drive energy and influences switching speed and losses.
相關連結
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