製造零件編號

Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

RS庫存編號:: 217-2543
製造零件編號:: IPN60R360P7SATMA1
製造商:: Infineon

Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

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可享批量折扣

小計（1 包，共 20 件）*

TWD444.00

(不含稅)

TWD466.20

訂單超過 $1,300.00 免費送貨

有庫存

5,720 件準備從其他地點送貨

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單位	每單位	每包*
20 - 740	TWD22.20	TWD444.00
760 - 1480	TWD21.60	TWD432.00
1500 +	TWD20.20	TWD404.00

* 參考價格

RS庫存編號:: 217-2543
製造零件編號:: IPN60R360P7SATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Series	IPN
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	111W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	8.8mm
	Width	8.8 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Series IPN
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 111W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 8.8mm
	Width 8.8 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPN60R360P7SATMA1

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Best-fit performance superjunction technology

Cost-effective package solution

Best-in-class price/performance ratio

Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

訂單超過 $1,300.00 免費送貨

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