Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
- RS庫存編號:
- 244-2271
- 製造零件編號:
- IPN60R600PFD7SATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD72.00
(不含稅)
TWD75.60
(含稅)
訂單超過 $1,300.00 免費送貨
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- 1,415 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD14.40 | TWD72.00 |
| 10 - 95 | TWD13.80 | TWD69.00 |
| 100 - 245 | TWD13.60 | TWD68.00 |
| 250 - 495 | TWD13.40 | TWD67.00 |
| 500 + | TWD13.00 | TWD65.00 |
* 參考價格
- RS庫存編號:
- 244-2271
- 製造零件編號:
- IPN60R600PFD7SATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss, excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Enables high power density designs and small form factors
Enables efficiency gains at higher switching frequencies
Excellent commutation ruggedness
Easy to select the right parts and optimize the design
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