Infineon IPN N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1
- RS庫存編號:
- 217-2542
- 製造零件編號:
- IPN60R360P7SATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD40,200.00
(不含稅)
TWD42,210.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD13.40 | TWD40,200.00 |
| 15000 + | TWD13.00 | TWD39,000.00 |
* 參考價格
- RS庫存編號:
- 217-2542
- 製造零件編號:
- IPN60R360P7SATMA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 111W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.8mm | |
| Width | 8.8mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 111W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 8.8mm | ||
Width 8.8mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon IPN Series MOSFET, 600V Maximum Drain Source Voltage, 111W Maximum Power Dissipation - IPN60R360P7SATMA1
This MOSFET is a high-voltage N-channel switch intended for surface-mounted power applications, offering enhancement‑mode operation for controlled conduction in electronic circuits. It is designed to operate across an extended ambient range and interfaces via three pins in a Compact SOT-223 package suited to board‑level assembly.
Features and Benefits:
• 600 V drain tolerance enables operation in high-voltage systems
• 9 A continuous drain current supports moderate power loads
• 360 mΩ Rds(on) minimises conduction losses at rated conditions
• 111 W power dissipation allows sustained thermal handling
• 36 nC typical gate charge facilitates predictable switching behaviour
• 9 A continuous drain current supports moderate power loads
• 360 mΩ Rds(on) minimises conduction losses at rated conditions
• 111 W power dissipation allows sustained thermal handling
• 36 nC typical gate charge facilitates predictable switching behaviour
Applications
• Suitable for high-voltage power switching designs
• Ideal for DC-DC converter output stages
• Used with power supplies requiring surface-mount components
• Can be used for motor driver switches in control circuits
• Suitable for line‑level power management in industrial equipment
• Ideal for DC-DC converter output stages
• Used with power supplies requiring surface-mount components
• Can be used for motor driver switches in control circuits
• Suitable for line‑level power management in industrial equipment
What gate voltage limits must be observed during operation?
The gate must not exceed a Peak of 20 V relative to source to avoid overstress.
What thermal range can the device withstand in service?
It is specified for operation from −40 °C to 150 °C to cover low-temperature start‑up and elevated operating conditions.
How many electrical connections does it provide for PCB mounting?
It provides three electrical pins and is supplied in an SOT-223 surface‑mount format.
What is the typical forward drop when conducting in the forward diode path?
The forward voltage is specified at 0.9 V under the datasheet test conditions.
相關連結
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