製造零件編號

Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

RS庫存編號:: 217-2548
製造零件編號:: IPN70R450P7SATMA1
製造商:: Infineon

Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

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小計（1 包，共 20 件）*

TWD272.00

(不含稅)

TWD285.60

訂單超過 $1,300.00 免費送貨

有庫存

720 件準備從其他地點送貨

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單位	每單位	每包*
20 - 740	TWD13.60	TWD272.00
760 - 1480	TWD13.20	TWD264.00
1500 +	TWD13.00	TWD260.00

* 參考價格

RS庫存編號:: 217-2548
製造零件編號:: IPN70R450P7SATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	700V
	Series	IPN
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	6.2W
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	13.1nC
	Maximum Operating Temperature	150°C
	Length	6.7mm
	Standards/Approvals	No
	Width	3.7 mm
	Height	1.8mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 700V
	Series IPN
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 6.2W
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 13.1nC
	Maximum Operating Temperature 150°C
	Length 6.7mm
	Standards/Approvals No
	Width 3.7 mm
	Height 1.8mm
	Automotive Standard No

Datasheet - IPN70R450P7SATMA1

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Extremely low losses due to very low FOMR DS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses(Eoss)

Product validation acc. JEDEC Standard

Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

訂單超過 $1,300.00 免費送貨

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