Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K2P7ATMA1

RS庫存編號:: 217-2553
製造零件編號:: IPN80R1K2P7ATMA1
製造商:: Infineon

Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K2P7ATMA1

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小計（1 包，共 20 件）*

TWD494.00

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TWD518.80

訂單超過 $1,300.00 免費送貨

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20 - 740	TWD24.70	TWD494.00
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1500 +	TWD23.70	TWD474.00

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RS庫存編號:: 217-2553
製造零件編號:: IPN80R1K2P7ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	800V
	Series	IPN
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	6.8W
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	6.7mm
	Width	3.7 mm
	Standards/Approvals	No
	Height	1.8mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 800V
	Series IPN
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 6.8W
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 6.7mm
	Width 3.7 mm
	Standards/Approvals No
	Height 1.8mm
	Automotive Standard No

Datasheet - IPN80R1K2P7ATMA1

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K2P7ATMA1

訂單超過 $1,300.00 免費送貨

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