Name: Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 67 A, 80 V Enhancement, 8-Pin PDFN56
Brand: Taiwan Semiconductor
SKU: 216-9677
Price: 123.06 TWD
Availability: Discontinued

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選取全部	屬性	值
	品牌	Taiwan Semiconductor
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	67A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PDFN56
	Series	TSM025
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	8.9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	90nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83W
	Maximum Operating Temperature	155°C
	Standards/Approvals	No
	Width	5 mm
	Height	1mm
	Length	6mm
	Automotive Standard	No

	選取全部
	品牌 Taiwan Semiconductor
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 67A
	Maximum Drain Source Voltage Vds 80V
	Package Type PDFN56
	Series TSM025
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 8.9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 90nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83W
	Maximum Operating Temperature 155°C
	Standards/Approvals No
	Width 5 mm
	Height 1mm
	Length 6mm
	Automotive Standard No

Datasheet-TSM089N08LCR

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 67 A, 80 V Enhancement, 8-Pin PDFN56

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