Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 80 A, 30 V Enhancement, 8-Pin PDFN56 TSM055N03PQ56
- RS庫存編號:
- 216-9666
- 製造零件編號:
- TSM055N03PQ56
- 製造商:
- Taiwan Semiconductor
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD940.00
(不含稅)
TWD987.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,650 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 600 | TWD37.60 | TWD940.00 |
| 625 - 1225 | TWD36.80 | TWD920.00 |
| 1250 + | TWD36.00 | TWD900.00 |
* 參考價格
- RS庫存編號:
- 216-9666
- 製造零件編號:
- TSM055N03PQ56
- 製造商:
- Taiwan Semiconductor
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 5 mm | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 5 mm | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Halogen-free according to IEC 61249-2-21
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