Taiwan Semiconductor TSM025 N-Channel MOSFET, 124 A, 30 V Enhancement, 8-Pin PDFN56
- RS庫存編號:
- 216-9655
- 製造零件編號:
- TSM036N03PQ56
- 製造商:
- Taiwan Semiconductor
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- RS庫存編號:
- 216-9655
- 製造零件編號:
- TSM036N03PQ56
- 製造商:
- Taiwan Semiconductor
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 124A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Height | 1.05mm | |
| Standards/Approvals | IEC 61249-2-21, WEEE 2002/96/EC, RoHS 2011/65/EU | |
| Width | 3.78mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 124A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Height 1.05mm | ||
Standards/Approvals IEC 61249-2-21, WEEE 2002/96/EC, RoHS 2011/65/EU | ||
Width 3.78mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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