Taiwan Semiconductor TSM025 N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56
- RS庫存編號:
- 216-9701
- 製造零件編號:
- TSM220NB06CR
- 製造商:
- Taiwan Semiconductor
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD89,250.00
(不含稅)
TWD93,700.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD35.70 | TWD89,250.00 |
| 5000 - 7500 | TWD34.90 | TWD87,250.00 |
| 10000 + | TWD34.20 | TWD85,500.00 |
* 參考價格
- RS庫存編號:
- 216-9701
- 製造零件編號:
- TSM220NB06CR
- 製造商:
- Taiwan Semiconductor
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.2mm | |
| Width | 4.2mm | |
| Height | 1.1mm | |
| Standards/Approvals | WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 6.2mm | ||
Width 4.2mm | ||
Height 1.1mm | ||
Standards/Approvals WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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