Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56 TSM220NB06CR
- RS庫存編號:
- 216-9702
- 製造零件編號:
- TSM220NB06CR
- 製造商:
- Taiwan Semiconductor
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD892.50
(不含稅)
TWD937.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 5,000 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 600 | TWD35.70 | TWD892.50 |
| 625 - 1225 | TWD34.80 | TWD870.00 |
| 1250 + | TWD34.30 | TWD857.50 |
* 參考價格
- RS庫存編號:
- 216-9702
- 製造零件編號:
- TSM220NB06CR
- 製造商:
- Taiwan Semiconductor
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Standards/Approvals | WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21 | |
| Width | 4.2 mm | |
| Length | 6.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Standards/Approvals WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21 | ||
Width 4.2 mm | ||
Length 6.2mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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