Taiwan Semiconductor TSM025 N-Channel MOSFET, 25 A, 60 V Enhancement, 8-Pin PDFN56
- RS庫存編號:
- 216-9712
- 製造零件編號:
- TSM300NB06DCR
- 製造商:
- Taiwan Semiconductor
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD137,000.00
(不含稅)
TWD143,850.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD54.80 | TWD137,000.00 |
| 5000 - 7500 | TWD53.60 | TWD134,000.00 |
| 10000 + | TWD52.40 | TWD131,000.00 |
* 參考價格
- RS庫存編號:
- 216-9712
- 製造零件編號:
- TSM300NB06DCR
- 製造商:
- Taiwan Semiconductor
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 40W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.2mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 6.2mm | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 40W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.2mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 6.2mm | ||
Height 1.15mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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