Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 215-2508
- 製造零件編號:
- IPD70R600P7SAUMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD29,750.00
(不含稅)
TWD31,250.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,500 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD11.90 | TWD29,750.00 |
| 12500 + | TWD11.50 | TWD28,750.00 |
* 參考價格
- RS庫存編號:
- 215-2508
- 製造零件編號:
- IPD70R600P7SAUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 10.5W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 10.5W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 8.5A Continuous Drain Current - IPD70R600P7SAUMA1
This MOSFET is a high-voltage, N‑channel switching transistor designed for surface‑mount power applications. It operates in enhancement mode and is intended for circuits requiring elevated drain-source voltage capability while providing moderate conduction performance and thermal handling for compact SMD layouts.
Features and Benefits:
• 700V drain-source rating enables high‑voltage switching duties
• 8.5A continuous drain current supports sustained load conduction
• 600mΩ Rds(on) limits conduction losses in medium‑power designs
• 10.5W maximum power dissipation permits reliable thermal margin
• 10.5nC typical gate charge gives faster gate transitions
• ±20V gate tolerance allows standard gate‑drive voltages
• 8.5A continuous drain current supports sustained load conduction
• 600mΩ Rds(on) limits conduction losses in medium‑power designs
• 10.5W maximum power dissipation permits reliable thermal margin
• 10.5nC typical gate charge gives faster gate transitions
• ±20V gate tolerance allows standard gate‑drive voltages
Applications
• Suitable for high‑voltage switch‑mode power supplies
• Ideal for primary‑side power conversion stages
• Used with resonant and hard‑switched topologies
• Can be used for industrial lighting ballasts
• Employed in compact SMD power modules
• Ideal for primary‑side power conversion stages
• Used with resonant and hard‑switched topologies
• Can be used for industrial lighting ballasts
• Employed in compact SMD power modules
What temperature range can it withstand in operation?
It is specified to operate from -55°C up to 150°C, covering wide thermal environments.
How many electrical connections does it present for PCB layout?
The device has three pins in a TO‑252 surface‑mount package requiring conventional SMD footprint design.
What conduction characteristic determines voltage drop during on‑state?
The on‑state resistance of 600mΩ defines the voltage drop at a given drain current and affects conduction losses.
How does gate drive affect switching performance?
The typical gate charge of 10.5nC at Vgs conditions influences required drive current and switching speed for a given gate‑driver capability.
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