Infineon 700V CoolMOS P7 N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPA70R600P7SXKSA1
- RS庫存編號:
- 218-3013
- 製造零件編號:
- IPA70R600P7SXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
TWD846.00
(不含稅)
TWD888.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 80 | TWD42.30 | TWD846.00 |
| 100 + | TWD41.70 | TWD834.00 |
* 參考價格
- RS庫存編號:
- 218-3013
- 製造零件編號:
- IPA70R600P7SXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 24.9W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 24.9W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 8.5A Continuous Drain Current - IPA70R600P7SXKSA1
This MOSFET is a high-voltage N-channel transistor designed for power switching in through-hole assemblies. It operates across a wide ambient range and is suited to applications requiring substantial voltage blocking and controlled gate drive while mounted in a TO-220 package.
Features and Benefits:
• 700V drain-source rating enables high-voltage switching capability
• 8.5A continuous drain current supports moderate current loads
• 600mΩ Rds(on) reduces conduction losses in switching cycles
• 0.9V forward voltage limits diode drop during commutation
• 24.9W power dissipation permits substantial thermal throughput
• 30V maximum gate-source voltage allows standard gate‑drive voltages
• 8.5A continuous drain current supports moderate current loads
• 600mΩ Rds(on) reduces conduction losses in switching cycles
• 0.9V forward voltage limits diode drop during commutation
• 24.9W power dissipation permits substantial thermal throughput
• 30V maximum gate-source voltage allows standard gate‑drive voltages
Applications
• Used for switching in high-voltage power supplies
• Suitable for industrial high-voltage converters and inverters
• Ideal for through‑hole prototypes requiring robust heat‑sinking
• Can be used for medium‑current telecom power stages
• Used with discrete gate‑drive circuits in lab test rigs
• Suitable for industrial high-voltage converters and inverters
• Ideal for through‑hole prototypes requiring robust heat‑sinking
• Can be used for medium‑current telecom power stages
• Used with discrete gate‑drive circuits in lab test rigs
What operating temperatures can it withstand?
It functions across a thermal range from −40°C to +150°C.
How should it be mounted for optimal thermal performance?
The through‑hole TO-220 format is intended for bolt‑down heatsink mounting to maximise dissipation.
What gate‑drive constraints must be observed?
The gate‑source voltage must not exceed 30V to avoid gate damage.
What conduction and switching performance factors affect selection?
Conduction losses relate to the 600mΩ on‑resistance and switching behaviour is influenced by the 0.9V forward diode characteristic.
Is this device specified for automotive standard applications?
It is not designated to automotive standards and should be evaluated accordingly.
相關連結
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252 IPD70R600P7SAUMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220 IPAN70R450P7SXKSA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V P, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220