Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 214-4393
- Distrelec 貨號:
- 304-39-408
- 製造零件編號:
- IPD70R900P7SAUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD20,500.00
(不含稅)
TWD21,525.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD8.20 | TWD20,500.00 |
| 12500 + | TWD7.90 | TWD19,750.00 |
* 參考價格
- RS庫存編號:
- 214-4393
- Distrelec 貨號:
- 304-39-408
- 製造零件編號:
- IPD70R900P7SAUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 30.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.35mm | |
| Length | 6.65mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 30.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.35mm | ||
Length 6.65mm | ||
Automotive Standard No | ||
The Infineon 700V Cool MOS P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains.
It supports less magnetic size with lower BOM costs
It has high ESD ruggedness
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