Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin IPAK IPSA70R360P7SAKMA1
- RS庫存編號:
- 214-4422
- 製造零件編號:
- IPSA70R360P7SAKMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 20 件）*
TWD418.00
(不含稅)
TWD438.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,240 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 80 | TWD20.90 | TWD418.00 |
| 100 + | TWD20.70 | TWD414.00 |
* 參考價格
- RS庫存編號:
- 214-4422
- 製造零件編號:
- IPSA70R360P7SAKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 59.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 59.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.6mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The 700V Cool MOS P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains.
It supports less magnetic size with lower BOM costs
It has high ESD ruggedness
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